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Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom Thickness

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Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom Thickness

Brand Name : zmsh

Place of Origin : China

Orientation : C axis (0001) to A(11-20) 5°off

Matarial : 99.999% Sapphire Crystal

TTV : <15um

Bow : <50um

Polished : DSP or SSP

Diameter : Customized

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Sapphire Wafer – Off C-axis toward M-plane , Al₂O₃, Diameter 2"/3"/4"/6"/8", Custom Thickness

This high-precision sapphire wafer features a 8° off from C-axis toward M plane orientation and 99.999% (5N) purity, optimized for superior epitaxial growth in advanced optoelectronic and semiconductor applications. Available in standard diameters (2" to 8") with customizable thicknesses, it provides exceptional crystallographic uniformity, ultra-low defect density, and outstanding thermal/chemical stability. The controlled 1° off-cut angle enhances GaN and AlN epitaxy by reducing step-bunching defects, making it ideal for high-performance LEDs, laser diodes, power electronics, and RF devices.


Key Features of Sapphire Wafer

Precision Off-Cut Orientation

8° off from C-axis toward M plane, engineered to improve epitaxial film uniformity and minimize defects in GaN-based devices.

Ultra-High Purity (5N Al₂O₃)

99.999% purity with trace impurities (Fe, Ti, Si) <5 ppm, ensuring optimal electrical and optical performance.

Diameters: 2", 3", 4", 6", 8" (±0.1 mm tolerance).

Thickness: 100 µm to 1,500 µm (±5 µm tolerance), tailored for

Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom Thickness

specific applications.

Epi-ready polish: Ra <0.5 nm (front side) for defect-free thin-film deposition.

Thermal stability: Melting point ~2,050°C, suitable for

high-temperature processes (MOCVD, MBE).

Optical transparency: >85% transmission (UV to mid-IR: 250 nm–5,000 nm).

Mechanical robustness: 9 Mohs hardness, resistant to chemical etching and abrasion.


Applications of Sapphire Wafer

Optoelectronics

GaN-based LEDs/Laser Diodes: Blue/UV LEDs, micro-LEDs, and VCSELs.

High-power laser windows: CO₂ and excimer laser components.

Power & RF Electronics

HEMTs (High-Electron-Mobility Transistors): 5G/6G power amplifiers and radar systems.

Schottky diodes and MOSFETs: High-voltage devices for electric vehicles.

Industrial & Defense

IR windows and missile domes: High transparency in harsh environments.

Sapphire sensors: Corrosion-resistant covers for industrial monitoring.

Quantum & Research Technologies

Substrates for superconducting qubits (quantum computing).

SPDC (Spontaneous Parametric Down-Conversion) crystals for quantum optics.

Semiconductor & MEMS

SOI (Silicon-on-Insulator) wafers for advanced ICs.

MEMS pressure sensors requiring chemical inertness.

Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom ThicknessAl₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom Thickness


Specifications

Parameter

Value

Diameter 2", 3", 4", 6", 8" (±0.1 mm)
Thickness Custom (100–1,500 µm ±5 µm)
Orientation off C-axis toward M plane 8°
Purity 99.999% (5N Al₂O₃)
Surface Roughness (Ra) <0.5 nm (epi-ready)
Dislocation Density <500 cm⁻²
TTV (Total Thickness Variation) <10 µm
Bow/Warp <15 µm
Optical Transparency 250–5,000 nm (>85%)


Q&A

Q1: Can I request a different off-cut angle (e.g., 0.5° or 2°)?
A2: Yes. Custom off-cut angles are available with ±0.1° tolerance.

Q2: What’s the maximum thickness available?
A6: Up to 1,500 µm (1.5 mm) for mechanical stability in high-stress applications.

Q3: How should wafers be stored to prevent contamination?
A10: Store in cleanroom-compliant cassettes or nitrogen cabinets (20–25°C, humidity <40%).


Product Tags:

3'' Sapphire Wafer Al2O3

      

Sapphire Wafer Al2O3

      
 Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2&quot;– 8&quot;, Custom Thickness Manufactures

Al₂O₃ Sapphire Wafer, Off C-Axis Toward M-Plane 8°, Diameters: 2"– 8", Custom Thickness Images

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