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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

  • Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  • Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  • Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  • Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  • Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Product Description: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal ...

Product Tags:

High-power Devices SIC Wafer

      

350μm SIC Wafer

      

10*10 mm SIC Wafer

      
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